2008. 4. 30 1/2 semiconductor technical data smab36 schottky barrier type diode revision no : 4 switching type power supply applications. features low profile surface mount package. low power loss, high efficiency. for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. application switching power supply. dc/dc converter. home appliances, office equipment. telecommunication. maximum rating (ta=25 ) electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit peak forward voltage v fm i fm =3.0a - - 0.6 v repetitive peak reverse current i rrm v rrm =rated - - 0.2 ma thermal resistance r th(j-1) junction to lead - - 23 /w r th(j-a) junction to ambient (on alumina substrate) - - 108 characteristic symbol rating unit maximum repetitive peak reverse voltage v rrm 60 v average output rectitifed current i o 3 a peak one cycle surge forward current (non-repetitive 60hz) i fsm 70 a junction temperature t j -40 150 storage temperature range t stg -40 150
2008. 4. 30 2/2 smab36 revision no : 4
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